DSI45-12A single diode standard rectifier 1 3 part number DSI45-12A backside: cathode fav f vv 1.23 rrm 45 1200 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-247 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20130215d data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI45-12A v = v a2s a2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.26 r 0.55 k/w r min. 45 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 130 p tot 270 w t = 25c c r k/w 45 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.57 t = 25c vj 150 v f0 v 0.81 t = c vj 175 r f 9.1 m ? v 1.23 t = c vj i = a f v 45 1.66 i = a f 90 i = a f 90 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 18 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 480 520 840 805 a a a a 410 440 1.15 1.13 1200 fav 180 sine average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 0.25 ixys reserves the right to change limits, conditions and dimensions. 20130215d data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI45-12A ratings 000000 yywwz logo part number datecode assembly code abcdef product marking assembly line dsi45-16ar isoplus247 (2) 1600 package t vj c m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 120 mounting force with clip 20 i rms rms current 70 a per terminal 175 -40 dsi45-08a to-247ad (2) 800 to-247 similar part package voltage class dsi45-16a to-247ad (2) 1600 delivery mode quantity code no. part number marking on product ordering DSI45-12A 471895 tube 30 DSI45-12A standard threshold voltage v 0.81 m ? v 0 max r 0 max slope resistance * 6.5 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130215d data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI45-12A s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 2x b e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.430 bsc 10.92 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 1 3 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. 20130215d data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSI45-12A 0.001 0.01 0.1 1 200 240 280 320 360 400 234567890 1 1 0 200 400 600 800 1000 1200 0.5 1.0 1.5 0 10 20 30 40 50 60 70 80 0 1020304050 0 20 40 60 80 0 50 100 150 200 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 i 2 t [a 2 s] i fsm [a] i f [a] v f ] s [ t ] v [ p tot [w] i davm [a] t amb [c] t[ms] z th [k/w] 0 50 100 150 200 0 20 40 60 80 t c [c] 50 hz, 80% v rrm t vj = 45c t vj = 45c t vj = 150c t vj = 150c t[ms] i davm [a] v r = 0 v fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t vj = 150c 125c 25c dc = 1 0.5 0.4 0.33 0.17 0.08 r thja : 0.6 kw 0.8 kw 1 kw 2 kw 4 kw 8 kw dc = 1 0.5 0.4 0.33 0.17 0.08 i 1 2 3 4 r i 0.033 0.095 0.164 0.258 t i 0.0006 0.0039 0.033 0.272 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130215d data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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